sign in

Username Password

Forget Password ? ? Click Here

Don't Have An Account ? Create One

sign up

name Username Email Mobile Password

To contact us, you can contact us via the following mobile numbers by calling and WhatsApp


+989115682731 Connect To WhatsApp
+989917784643 Connect To WhatsApp
EnglishEnglish SpanishSpanish PortuguesePortuguese FrenchFrench GermanGerman ChineseChinese

Unlimited Access

For Registered Users

Secure Payment

100% Secure Payment

Easy Returns

10 Days Returns

24/7 Support

Call Us Anytime

Convergence of More Moore, More than Moore and Beyond Moore: Materials, Devices, and Nanosystems 2021 book

Convergence of More Moore, More than Moore and Beyond Moore: Materials, Devices, and Nanosystems

Details Of The Book

Convergence of More Moore, More than Moore and Beyond Moore: Materials, Devices, and Nanosystems

edition: 1 
Authors:   
serie: Jenny Stanford Series on Intelligent Nanosystems, 4 
ISBN : 9814877123, 9789814877121 
publisher: Jenny Stanford Publishing 
publish year: 2021 
pages: 306 
language: English 
ebook format : PDF (It will be converted to PDF, EPUB OR AZW3 if requested by the user) 
file size: 10 MB 

price : $8.2 10 With 18% OFF



Your Rating For This Book (Minimum 1 And Maximum 5):

User Ratings For This Book:       


You can Download Convergence of More Moore, More than Moore and Beyond Moore: Materials, Devices, and Nanosystems Book After Make Payment, According to the customer's request, this book can be converted into PDF, EPUB, AZW3 and DJVU formats.


Abstract Of The Book



Table Of Contents

Cover
Half Title
Title Page
Copyright Page
Table of Contents
Preface
Acknowledgments
Introduction
Part I: From Nanoelectronics to Diversified Nanosystems
	Chapter 1: The Era of Sustainable and Energy Efficient Nanoelectronics and Nanosystems
		1.1: Introduction
		1.2: Energy and Variability Efficient Nanoelectronics
			1.2.1: Moore’s Law, More than Moore, and Beyond Moore Challenges and Sustainability
			1.2.2: Innovations and Trends Leading to Market Drivers
				1.2.2.1: CMOS technology as a driver
				1.2.2.2: Memories as market drivers and hierarchy in information processing
				1.2.2.3: Pushing further the limits or introducing innovative approaches
			1.2.3: Geometrical Downscaling of Logic Devices: MOSFET Electrostatic Integrity
				1.2.3.1: Introduction of breakthrough modules
				1.2.3.2:  Opportunities for tunneling field effect transistors
			1.2.4: Memory Scaling
				1.2.4.1: Conventional scaling hits the limit
				1.2.4.2:  Nanofloating gates to help conventional NVM scaling?
				1.2.4.3: Three-dimensional integration for mass storage
				1.2.4.4: Alternative architectures to floating gate cells
			1.2.5: Towards Zero Intrinsic Variability Through New Fabrication Paradigms
		1.3: More Moore and More than Moore Co-integrated into 3D Zero Power Systems
	Chapter 2: From 2D to 3D Nonvolatile Memories
		2.1: 2D and 3D NAND Array Architecture
			2.1.1: Array Architecture
			2.1.2: Cell Architecture
		2.2: Scaling Limitations of 2D NAND and Transitions to 3D NAND
			2.2.1: Few-Electron Effects
			2.2.2: Fluctuation of the Number of Electrons (Program Noise)
			2.2.3: VT Instability due to Charge Trap/Detrap
			2.2.4: Cell-to-Cell Interference
		2.3: Key Technology Features of 3D NAND
			2.3.1: 3D NAND Architectures
			2.3.2: GIDL Erase
			2.3.3: Thin Polysilicon Channel
			2.3.4: CMOS Under Array
			2.3.5: Four Bits/Cell QLC
		2.4: 3D NAND Technology Scaling
		2.5: Conclusions
	Chapter 3: Three-Dimensional Vertical RRAM
		3.1: Introduction
		3.2: Architectures of 3D Vertical RRAM
		3.3: Memory Cells in 3D VRRAM Architectures
			3.3.1: Sneak Path Issues in 3D VRRAM
			3.3.2: Self-Rectifying RRAM
			3.3.3: Built-in Nonlinearity RRAM
				3.3.3.1: SSC with threshold type selection layer
				3.3.3.2: SSC with exponential type selection layer
		3.4: Challenges for 3D VRRAM
		3.5: Conclusions
	Chapter 4: SOI Technologies for RF and Millimeter-Wave Applications
		4.1: Introduction
		4.2: SOI Devices
			4.2.1: Device Architecture and Electrostatics
			4.2.2: A Brief History of SOI Devices
			4.2.3: High-Performance RF and Millimeter-Wave PD-SOI and FD-SOI
			4.2.4: Low-Power FD-SOI
			4.2.5: Summary
		4.3: State-of-the-Art SOI ICs
			4.3.1: RF Front-End Modules: History
			4.3.2: RF Front-End Modules: Future Trends
			4.3.3: Summary
		4.4: Silicon-Based Substrates at RF
			4.4.1: From Standard Silicon to HR- and TR-SOI
			4.4.2: Substrate Impact on Coplanar Technology: Measurements and Modeling Techniques
			4.4.3: Quality of Integrated Passive Devices: Inductors and Filters
			4.4.4: Substrate Noise Coupling: Crosstalk and Isolation
			4.4.5: Substrate Linearity: Signal Distortion Induced by Silicon-Based Substrate Materials
			4.4.6: Application Example: Substrate Impact on RF Switch Modules
			4.4.7: Summary
		4.5: Next-Generation Silicon Substrate Solutions
			4.5.1: Buried PN Depletion Junction Substrates
			4.5.2: Post-Process Local Porous Silicon
			4.5.3: RF Performance of Buried PN and PSi Substrates
			4.5.4: Summary
		4.6: Conclusion
Part II: Nanofunctions for Augmented Nanosystems
	Chapter 5: Graphene Nanoelectromechanical Switch: Ultimate Downscaled NEM Actuators to Single-Molecule and Zeptogram Mass Sensors
		5.1: Introduction
		5.2: Graphene
			5.2.1: Graphene as a NEM Switch Material
			5.2.2: Graphene as a Gas-Sensitive Material
			5.2.3: Graphene Devices
				5.2.3.1: Mechanical exfoliation of graphene
				5.2.3.2: Epitaxial graphene technique
				5.2.3.3: Chemical vapor deposition of graphene
		5.3: Graphene Nanoelectromechanical Switch
		5.4: Bottom-Gate Two-Terminal GNEM Switch
		5.5: Top-Gate Doubly Clamped Two-Terminal GNEM Switch
		5.6: Top-Gate Two-Terminal Cantilever GNEM Switch
		5.7: Three-Terminal GNEM Switch with All Two-Dimensional Materials
		5.8: Large-Scale Nanocrystalline GNEM Switch
		5.9: GNEM Sensor for Single-Molecule Adsorption Detection
		5.10: Graphene Resonator Sensor for Ultrasmall Mass Detection
		5.11: Summary
	Chapter 6: Self-Powered 3D Nanosensor Systems for Mechanical Interfacing Applications
		6.1: Application Needs for 3D Self-Powered Nanosensor Systems
		6.2: Piezotronic Effect–Enabled 3D Self-Powered Tactile Nanosensor Systems
		6.3: Piezophotonic Effect–Enabled 3D Self-Powered Nanosensor Systems
		6.4: Contact Triboelectrification-Enabled 3D Self-Powered Active Nanosensor Systems
		6.5: Conclusion and Outlook
	Chapter 7: Miniaturization and Packaging of Implantable Biomedical Silicon Devices
		7.1: Introduction
		7.2: From Titanium Box to Silicon Box
		7.3: From Box Encapsulation to Thin-Film Encapsulation
			7.3.1: Corrosion of Aluminum in PBS
			7.3.2: Barrier Properties of SiO2 in PBS
			7.3.3: Barrier Properties of Al2O3/TiO2 in PBS
			7.3.4: Barrier Properties of Ti–TiN in PBS
			7.3.5: Optimal Stacking as Barrier Against PBS
		7.4: Biocompatibility
		7.5: Conclusion
Index


First 10 Pages Of the book


Comments Of The Book